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See Technical Specifications

ARF465AG +BOM

1200V RF MOSFET.

Manufacturer:

Microchip
Mfr.Part #:

ARF465AG
Datasheet:

ARF465AG Datasheet (PDF)
Transistor Polarity:

N-Channel
Technology:

Si
Id - Continuous Drain Current:

6 A
Vds - Drain-Source Breakdown Voltage:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for ARF465AG

ARF465AG General Description

With the introduction of the ARF465AG, Microchip has redefined what is possible with RF power MOSFETs. By optimizing its design for frequencies reaching up to 150 MHz and supporting operating voltages of 400V, this MOSFET opens up new possibilities for high-power RF applications. The combination of Microchip's expertise in high-voltage MOSFET technology and RF-specific die geometries has resulted in a product that shatters previous limitations and sets a new standard for performance and reliability in the RF power market

Key Features

Semi-Cap (6, 13, 27, 40MHz)
Industrial Glass (6, 13, 27, 40MHz)
PV Cells (6, 13, 27, 40MHz)
Flat Panel Displays (6, 13, 27, 40MHz)
Mass Spectrometry (13, 27MHz)
Dielectric Heating (2 to 40MHz)
Machine Tools (6, 13, 27MHz)
Drilling (6, 13, 27MHz)
Marking (13, 27, 40, 81, 108MHz)
Cutting (6, 13, 27MHz)
MRI (8 to 36, 64, 128 300MHz)
Laser Scalpel (13, 27, 40, 81, 108MHz)
Diathermy/Hyperthermia (8MHz)
Chemical Analysis (13, 27MHz)
Marine Radio (2 to 40MHz)
HF Radio (2 to 40MHz)
FM Broadcast (87 to 108MHz)

Specifications

Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Id - Continuous Drain Current	6 A
Vds - Drain-Source Breakdown Voltage	1.2 kV	Rds On - Drain-Source Resistance	-
Operating Frequency	60 MHz	Gain	13 dB
Output Power	150 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Mounting Style	Through Hole
Product Type	RF MOSFET Transistors	Factory Pack Quantity	1
Subcategory	MOSFETs