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AS1C512K16P-70BIN +BOM

PSRAM (Pseudo SRAM) Memory IC 8Mbit Parallel 70 ns 48-FBGA (6x7)

AS1C512K16P-70BIN General Description

The AS1C512K16P-70BIN is a high-performance Pseudo SRAM that boasts refresh-free operation, making it an excellent choice for applications requiring continuous data access without interruptions. With its DRAM type memory cells and extreme low power consumption technology, this device offers both efficiency and reliability. The compatibility with low power Asynchronous SRAM ensures seamless integration into existing systems while providing superior performance

Specifications

Category Integrated Circuits (ICs)MemoryMemory Series -
Memory Type Volatile Memory Format PSRAM
Technology PSRAM (Pseudo SRAM) Memory Size 8Mbit
Memory Organization 512K x 16 Memory Interface Parallel
Write Cycle Time - Word, Page 70ns Access Time 70 ns
Voltage - Supply 2.6V ~ 3.3V Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount Base Product Number AS1C512
Pin Count 48 Released Date May 25, 2023
Last Modified Date May 26, 2023 6:25 AM UTC

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