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AS4C16M16MSA-6BIN +BOM

DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT

AS4C16M16MSA-6BIN General Description

SDRAM - Mobile SDRAM Memory IC 256Mbit Parallel 166 MHz 5.5 ns 54-FBGA (8x8)

Specifications

Category Integrated Circuits (ICs)MemoryMemory Series -
Memory Type Volatile Memory Format DRAM
Technology SDRAM - Mobile SDRAM Memory Size 256Mbit
Memory Organization 16M x 16 Memory Interface Parallel
Clock Frequency 166 MHz Write Cycle Time - Word, Page -
Access Time 5.5 ns Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Base Product Number AS4C16 Product Category: DRAM
Type: SDRAM Mobile Mounting Style: SMD/SMT
Data Bus Width: 16 bit Organization: 16 M x 16
Memory Size: 256 Mbit Maximum Clock Frequency: 166 MHz
Access Time: 6 ns Supply Voltage - Max: 1.95 V
Supply Voltage - Min: 1.7 V Supply Current - Max: 80 mA
Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 85 C
Series: AS4C16M16MSA-6 Packaging: Tray
Moisture Sensitive: Yes Product Type: DRAM
Factory Pack Quantity: 319 Subcategory: Memory & Data Storage

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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