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See Technical Specifications

AS4C16M16S-6TIN +BOM

Halogen-free and RoHS compliant plastic material

Manufacturer:

Alliance Memory, Inc.
Mfr.Part #:

AS4C16M16S-6TIN
Datasheet:

AS4C16M16S-6TIN Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

DRAM
Technology:

SDRAM

AS4C16M16S-6TIN General Description

The AS4C16M16S-6TIN is a cutting-edge 256Mb DDR SDRAM chip that is engineered to meet the demands of modern computing and communication systems. With a blazing speed of 166MHz and a low latency of 6ns, this chip ensures seamless and efficient data transfer, making it ideal for high-performance applications. The Tin-Lead (Sn-Pb) finish makes it easy to solder onto circuit boards, enhancing the overall durability and reliability of the device. Whether you're working on a complex computing project or developing advanced communication technologies, the AS4C16M16S-6TIN is designed to deliver top-notch performance and consistent results

Key Features

Organization: 1,048,576 words × 4 bits
High speed
- 40/50/60/70 ns RAS access time
- 20/25/30/35 ns column address access time
- 10/13/15/18 ns CAS access time
Low power consumption
- Active: 385 mW max (-60)
- Standby: 5.5 mW max, CMOS I/O
Fast page mode (AS4C14400) or EDO (AS4C14405)
1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
Read-modify-write
TTL-compatible, three-state I/O
JEDEC standard packages
- 300 mil, 20/26-pin SOJ
- 300 mil, 20/26-pin TSOP
Single 5V power supply
ESD protection ≥ 2001V
Latch-up current ≥ 200 mA

Specifications

Programmabe	Not Verified	Memory Type	Volatile
Memory Format	DRAM	Technology	SDRAM
Memory Size	256Mbit	Memory Organization	16M x 16
Memory Interface	Parallel	Clock Frequency	166 MHz
Write Cycle Time - Word, Page	12ns	Access Time	5.4 ns
Voltage - Supply	3V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	AS4C16