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AS4C256M16D3-12BCN +BOM
DDR3 4G DRAM Module
FBGA-96-
Manufacturer:
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Mfr.Part #:
AS4C256M16D3-12BCN
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Datasheet:
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Type:
SDRAM - DDR3
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Mounting Style:
SMD/SMT
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Data Bus Width:
16 bit
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Organization:
256 M x 16
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EDA/CAD Models:
Availability: 7072 PCS
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AS4C256M16D3-12BCN General Description
The AS4C256M16D3-12BCN is a cutting-edge DDR3 SDRAM chip, boasting a whopping 4Gb capacity with a memory configuration of 256Mx16. Its impressive 1200MHz operating speed sets it apart from other memory chips on the market, ensuring high performance and efficiency in a wide range of applications. Whether you're using it in a computing, networking, or industrial setting, this chip delivers fast and reliable memory access for all your needs
Key Features
- Organization: 262,144 words × 16 bits
- High speed
- - 30/35/50 ns RAS access time
- - 16/18/25 ns column address access time
- - 7/10/10/10 ns CAS access time
- Low power consumption
- - Active: 500 mW max (AS4C256K16E0-25)
- - Standby: 3.6 mW max, CMOS I/O (AS4C256K16E0-25)
- EDO page mode
- Refresh
- - 512 refresh cycles, 8 ms refresh interval
- - RAS-only or CAS-before-RAS refresh or self-refresh
- - Self-refresh option is available for new generation device only. Contact Alliance for more information.
- Read-modify-write
- TTL-compatible, three-state I/O
- JEDEC standard packages
- - 400 mil, 40-pin SOJ
- - 400 mil, 40/44-pin TSOP II
- 5V power supply
- Latch-up current> 200 mA
Specifications
Product Category | DRAM | Type | SDRAM - DDR3 |
Mounting Style | SMD/SMT | Data Bus Width | 16 bit |
Organization | 256 M x 16 | Memory Size | 4 Gbit |
Maximum Clock Frequency | 800 MHz | Access Time | 20 ns |
Supply Voltage - Max | 1.575 V | Supply Voltage - Min | 1.283 V |
Supply Current - Max | 110 mA | Minimum Operating Temperature | 0 C |
Maximum Operating Temperature | + 95 C | Series | AS4C256M16D3 |
Moisture Sensitive | Yes | Product Type | DRAM |
Factory Pack Quantity | 190 | Subcategory | Memory & Data Storage |
Part Life Cycle Code | Obsolete | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code | 8542.32.00.36 |
Access Mode | MULTI BANK PAGE BURST | Additional Feature | AUTO/SELF REFRESH |
JESD-30 Code | R-PBGA-B96 | Length | 13 mm |
Memory Density | 4294967296 bit | Memory IC Type | DDR DRAM |
Memory Width | 16 | Number of Functions | 1 |
Number of Ports | 1 | Number of Terminals | 96 |
Number of Words | 268435456 words | Number of Words Code | 256000000 |
Operating Mode | SYNCHRONOUS | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Seated Height-Max | 1.2 mm | Self Refresh | YES |
Supply Voltage-Max (Vsup) | 1.575 V | Supply Voltage-Min (Vsup) | 1.425 V |
Supply Voltage-Nom (Vsup) | 1.5 V | Surface Mount | YES |
Technology | CMOS | Terminal Form | BALL |
Terminal Pitch | 0.8 mm | Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Width | 9 mm |
Service Policies and Others
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for AS4C256M16D3-12BCN, guaranteed quotes back within 12hr.
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