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See Technical Specifications

AS4C512M16D4-75BIN +BOM

It is a high-density memory module suitable for various applications

Manufacturer:

ALLIANCE MEMORY INC
Mfr.Part #:

AS4C512M16D4-75BIN
Datasheet:

AS4C512M16D4-75BIN Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8542.32.00.36
EDA/CAD Models:

Request Free CAD Models for AS4C512M16D4-75BIN

AS4C512M16D4-75BIN General Description

The AS4C512M16D4-75BIN stands out as a high-performance DDR4 SDRAM module that excels in both speed and efficiency. Its 16 banks of 16Mx16 configuration, coupled with a CAS latency of 17 cycles, ensure smooth operation even under demanding workloads. With a low supply voltage of 1.2V, this module not only reduces power consumption but also enhances system efficiency and reliability. Additionally, its compact 96-ball FBGA package design makes it easy to integrate into various system designs, while its RoHS compliance and wide temperature range add to its versatility for different environments

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.36
Access Mode	MULTI BANK PAGE BURST	Additional Feature	AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)	1333 MHz	I/O Type	COMMON
Interleaved Burst Length	4,8	JESD-30 Code	R-PBGA-B96
Length	13 mm	Memory Density	8589934592 bit
Memory IC Type	DDR4 DRAM	Memory Width	16
Number of Functions	1	Number of Ports	1
Number of Terminals	96	Number of Words	536870912 words
Number of Words Code	512000000	Operating Mode	SYNCHRONOUS
Operating Temperature-Max	95 °C	Operating Temperature-Min	-40 °C
Organization	512MX16	Output Characteristics	3-STATE
Seated Height-Max	1.2 mm	Self Refresh	YES
Sequential Burst Length	4,8	Standby Current-Max	0.04 A
Supply Current-Max	0.43 mA	Supply Voltage-Max (Vsup)	1.26 V
Supply Voltage-Min (Vsup)	1.14 V	Supply Voltage-Nom (Vsup)	1.2 V
Surface Mount	YES	Technology	CMOS
Terminal Form	BALL	Terminal Pitch	0.8 mm
Terminal Position	BOTTOM	Width	7.5 mm