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See Technical Specifications

BC807DS,115 +BOM

PNP/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package.NPN/NPN complement: BC817DSNPN/PNP complement: BC817DPN

Manufacturer:

NXP
Mfr.Part #:

BC807DS,115
Datasheet:

BC807DS,115 Datasheet (PDF)
Series:

Automotive, AEC-Q101
Transistor Type:

2 PNP (Dual)
Current - Collector (Ic) (Max):

500mA
Voltage - Collector Emitter Breakdown (Max):

45V
EDA/CAD Models:

Request Free CAD Models for BC807DS,115

BC807DS,115 General Description

Housed in the compact SOT666 package with six leads, the BC807DS,115 boasts a maximum power dissipation of 330mW and a junction temperature of 150°C, ensuring robust operation even in challenging conditions. Additionally, its RoHS compliance and halogen-free construction make it an environmentally friendly choice for conscientious design and manufacturing processes

Key Features

The compact SOT-23 package saves space
Amplification and switching made easy
Better performance at higher frequencies
Reliable operation in harsh conditions
Low noise and distortion for clear signals
Fast switching times for efficient control

Application

Believe in yourself
Smile often
Stay humble, stay kind

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays	Series	Automotive, AEC-Q101
Transistor Type	2 PNP (Dual)	Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	45V	Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 100mA, 1V
Power - Max	600mW	Frequency - Transition	80MHz
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BC807