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Transistor RF FET N-CH 30V 1.8MHz to 941MHz 3-Pin SOT-89 T/R
SOT-89-3Manufacturer:
Mfr.Part #:
AFT05MS003NT1
Datasheet:
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
2.6 A
Vds - Drain-Source Breakdown Voltage:
- 500 mV, 30 V
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The AFT05MS003NT1 is a high-frequency RF transistor designed for use in a variety of applications. With a drain source voltage of 30VDC and a maximum power dissipation of 30.5W, this transistor is capable of delivering reliable performance in demanding conditions. Its operating frequency range of 1.8MHz to 941MHz makes it suitable for a wide range of RF applications, from telecommunications to industrial controls. The SOT-89-3 case design allows for easy integration into circuit boards, with 3 pins for simple connection. Operating at a maximum temperature of 150°C, this transistor can withstand high-temperature environments without sacrificing performance. The AFT05MS003NT1 is a versatile and reliable RF transistor that meets the highest industry standards
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Id - Continuous Drain Current | 2.6 A |
Vds - Drain-Source Breakdown Voltage | - 500 mV, 30 V | Operating Frequency | 1.8 MHz to 941 MHz |
Gain | 20.8 dB | Output Power | 3.2 W |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Mounting Style | SMD/SMT | Number of Channels | 1 Channel |
Pd - Power Dissipation | 30.5 W | Product Type | RF MOSFET Transistors |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | LDMOS FET | Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | - 6 V, 12 V | Vgs th - Gate-Source Threshold Voltage | 2.2 V |
Part # Aliases | 935312585147 | Unit Weight | 0.001792 oz |
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