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BFR949L3E6327 +BOM

Bipolar Transistors - BJT

BFR949L3E6327 General Description

RF Transistor NPN 10V 50mA 9GHz 250mW Surface Mount PG-TSLP-3-1

Infineon Technologies Corporation Inventory
Infineon Technologies Corporation Original Stock

Specifications

Product Category: RF Bipolar Transistors Transistor Type: Bipolar
Technology: Si Transistor Polarity: NPN
Operating Frequency: 9 GHz Collector- Emitter Voltage VCEO Max: 10 V
Emitter- Base Voltage VEBO: 1.5 V Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C Configuration: Single
Mounting Style: SMD/SMT Packaging: Cut Tape
Collector- Base Voltage VCBO: 20 V DC Current Gain hFE Max: 100 at 5 mA at 6 V
Height: 0.45 mm Length: 1 mm
Maximum DC Collector Current: 50 mA Pd - Power Dissipation: 250 mW
Product Type: RF Bipolar Transistors Factory Pack Quantity: 15000
Subcategory: Transistors Type: RF Bipolar Small Signal
Width: 0.6 mm Part # Aliases: BFR949L3E6327XT

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In Stock: 6,642

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.238 $0.24
200+ $0.092 $18.40
500+ $0.089 $44.50
1000+ $0.087 $87.00

The prices below are for reference only.

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