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BFG10W/X,115 +BOM

NPN wideband transistor

BFG10W/X,115 General Description

RF Transistor NPN 10V 250mA 1.9GHz 400mW Surface Mount 4-SO

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Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors Series -
Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 1.9GHz Noise Figure (dB Typ @ f) -
Gain - Power - Max 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 50mA, 5V Current - Collector (Ic) (Max) 250mA
Operating Temperature 175°C (TJ) Mounting Type Surface Mount
Base Product Number BFG10 feature-packaging Tape and Reel
feature-rad-hard feature-pin-count 4
feature-cecc-qualified No feature-esd-protection
feature-escc-qualified feature-military No
feature-aec-qualified No feature-aec-qualified-number
feature-auto-motive No feature-p-pap No
feature-eccn-code EAR99 feature-svhc No
feature-svhc-exceeds-threshold No

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