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See Technical Specifications

CY62168DV30LL-55BVI +BOM

SRAM Standard Memory with 2 Megabytes by 8 configuration

Manufacturer:

Infineon Technologies
Mfr.Part #:

CY62168DV30LL-55BVI
Datasheet:

CY62168DV30LL-55BVI Datasheet (PDF)
Series:

MoBL®
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

SRAM
EDA/CAD Models:

Request Free CAD Models for CY62168DV30LL-55BVI

CY62168DV30LL-55BVI General Description

When it comes to power efficiency, the CY62168DV30LL-55BVI shines with its minimal power consumption in both active and standby modes. With a low standby current of 10 µA max and an operating current of just 40 mA, this SRAM chip is a standout performer in battery-powered devices and energy-sensitive applications. Its extended temperature range of -40°C to 85°C further enhances its reliability in challenging environmental conditions, making it a top choice for industrial and outdoor applications

Key Features

Very high speed: 55 ns
Wide voltage range: 1.65 V to 2.25 V
Ultra low standby power
❐ Typical standby current: 1.5 μA
❐ Maximum standby current: 12 μA
Ultra low active power
❐ Typical active current: 2.2 mA at f = 1 MHz
Easy memory expansion with CE1, CE2, and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Offered in Pb-free 48-ball very fine ball grid array (VFBGA) packages

Specifications

Series	MoBL®	Programmabe	Not Verified
Memory Type	Volatile	Memory Format	SRAM
Technology	SRAM - Asynchronous	Memory Size	16Mbit
Memory Organization	2M x 8	Memory Interface	Parallel
Write Cycle Time - Word, Page	55ns	Access Time	55 ns
Voltage - Supply	2.2V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	CY62168