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See Technical Specifications

CY62256LL-70SNC +BOM

This SRAM chip has a 32K x 8 configuration, providing a total storage capacity of 256 kilobits."

Manufacturer:

Cypress Semiconductor Corp
Mfr.Part #:

CY62256LL-70SNC
Datasheet:

CY62256LL-70SNC Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

SRAM
Technology:

SRAM - Asynchronous

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

CY62256LL-70SNC General Description

Boasting a capacity of 256 kilobits and a high speed of 70 nanoseconds, the CY62256LL-70SNC SRAM chip stands out as a top choice for applications requiring rapid data access. Manufactured by Cypress Semiconductor, this chip combines performance and efficiency with its low power consumption design, denoted by the "LL" in the part number. Ideal for battery-powered devices and power-sensitive applications, the CY62256LL-70SNC offers a balance between speed and energy efficiency. Its low standby current feature further contributes to power savings when the chip is not in active use. Operating on a single 5-volt power supply, this chip is easy to integrate into various systems with its surface-mount package ("SNC" designation). Whether utilized in embedded systems, networking equipment, or other applications demanding fast, low-power memory, the CY62256LL-70SNC delivers on performance and reliability

Key Features

Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive: –40°C to 125°C
High speed: 55 ns and 70 ns
Voltage range: 4.5V–5.5V operation
Low active power (70 ns, LL version, Com’l and Ind’l)
— 275 mW (max.)
Low standby power (70 ns, LL version, Com’l and Ind’l)
— 28 µW (max.)
Easy memory expansion with CE and OE features
TTL-compatible inputs and outputs
Automatic power-down when deselected
CMOS for optimum speed/power
Package available in a standard 450-mil-wide (300-mil body width) 28-lead narrow SOIC, 28-lead TSOP-1, 28-lead reverse TSOP-1, and 600-mil 28-lead PDIP packages

Specifications

Programmabe	Not Verified	Memory Type	Volatile
Memory Format	SRAM	Technology	SRAM - Asynchronous
Memory Size	256Kbit	Memory Organization	32K x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	70ns	Access Time	70 ns
Voltage - Supply	4.5V ~ 5.5V	Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount