This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

CY7C1371D-100AXI +BOM

Featuring a fast 8

Manufacturer:

Cypress Semiconductor Corp
Mfr.Part #:

CY7C1371D-100AXI
Datasheet:

CY7C1371D-100AXI Datasheet (PDF)
Series:

NoBL™
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

SRAM
EDA/CAD Models:

Request Free CAD Models for CY7C1371D-100AXI

CY7C1371D-100AXI General Description

The CY7C1371D-100AXI is a cutting-edge synchronous SRAM chip that delivers exceptional performance at a blazing speed of 100 MHz. Its impressive capacity of 1 Meg x 36 bits makes it a versatile choice for a wide range of applications, including networking, telecommunications, and industrial automation. With its low power consumption and fast access times, this chip is designed to meet the demands of modern technology while ensuring reliable data transfer in even the most challenging environments

Key Features

No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles
Can support up to 133-MHz bus operations with zero wait states
— Data is transferred on every clock
Pin-compatible and functionally equivalent to ZBT™ devices
Internally self-timed output buffer control to eliminate the need to use OE
Registered inputs for flow-through operation
Byte Write capability
3.3V/2.5V I/O power supply
Fast clock-to-output times
— 6.5 ns (for 133-MHz device)
— 8.5 ns (for 100-MHz device)
Clock Enable (CEN) pin to enable clock and suspend operation
Synchronous self-timed writes
Asynchronous Output Enable
Offered in JEDEC-standard lead-free 100 TQFP, 119-ball BGA and 165-ball fBGA packages
Three chip enables for simple depth expansion
Automatic Power-down feature available using ZZ mode or CE deselect
JTAG boundary scan for BGA and fBGA packages
Burst Capability—linear or interleaved burst order
Low standby power

Specifications

Series	NoBL™	Programmabe	Not Verified
Memory Type	Volatile	Memory Format	SRAM
Technology	SRAM - Synchronous, SDR	Memory Size	18Mbit
Memory Organization	512K x 36	Memory Interface	Parallel
Clock Frequency	100 MHz	Access Time	8.5 ns
Voltage - Supply	3.135V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	CY7C1371