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CY7C185-20PXC +BOM

20 ns CY7C185-20PXC Standard SRAM, 8K x 8, PDIP28

CY7C185-20PXC General Description

SRAM - Asynchronous Memory IC 64Kbit Parallel 20 ns 28-PDIP

Key Features

  • High speed
  • ❐ 15 ns
  • Fast tDOE
  • Low active power
  • ❐ 715 mW
  • Low standby power
  • ❐ 85 mW
  • CMOS for optimum speed/power
  • Easy memory expansion with CE1, CE2 and OE features
  • TTL-compatible inputs and outputs
  • Automatic power-down when deselected
  • Available in non Pb-free 28-pin (300-Mil) Molded SOJ, 28-pin
  • (300-Mil) Molded SOIC and Pb-free 28-pin (300-Mil) Molded DIP

Specifications

Programmabe Not Verified Memory Type Volatile
Memory Format SRAM Technology SRAM - Asynchronous
Memory Size 64Kbit Memory Organization 8K x 8
Memory Interface Parallel Clock Frequency -
Write Cycle Time - Word, Page 20ns Access Time 20 ns
Voltage - Supply 4.5V ~ 5.5V Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Through Hole

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