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CY7C199-15PC +BOM

Asynchronous design enables flexible interface options, making this IC suitable for various parallel bus architectures

CY7C199-15PC General Description

The design of the CY7C199-15PC reflects a commitment to quality and efficiency. Its CMOS technology not only provides high speed and low power consumption, but also ensures reliable operation in various environmental conditions. Whether you are designing a new product or upgrading an existing one, this chip offers the performance and reliability you need to succeed

Key Features

High speed

10 ns

Fast tDOE

CMOS for optimum speed/power

Low active power

467 mW (max, 12 ns L version)

Low standby power

0.275 mW (max, L version)

2V data retention (L version only)

Easy memory expansion with CE and OE features

TTL-compatible inputs and outputs

Automatic power-down when deselected

Specifications

Programmabe Not Verified Memory Type Volatile
Memory Format SRAM Technology SRAM - Asynchronous
Memory Size 256Kbit Memory Organization 32K x 8
Memory Interface Parallel Clock Frequency -
Write Cycle Time - Word, Page 15ns Access Time 15 ns
Voltage - Supply 4.5V ~ 5.5V Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Through Hole

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