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D2114A4 +BOM

SRAM - Asynchronous Memory IC 4Kbit Parallel 200 ns 18-CDIP

D2114A4 General Description

SRAM - Asynchronous Memory IC 4Kbit Parallel 200 ns 18-CDIP

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Specifications

Series - Programmabe Not Verified
Memory Type Volatile Memory Format SRAM
Technology SRAM - Asynchronous Memory Size 4Kbit
Memory Organization 1K x 4 Memory Interface Parallel
Write Cycle Time - Word, Page 200ns Access Time 200 ns
Voltage - Supply 4.5V ~ 5.5V Operating Temperature -55°C ~ 125°C (TC)
Mounting Type Through Hole

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