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See Technical Specifications

FAM65CR51DZ2 +BOM

Power Driver Module MOSFET 2 Independent 650 V 33 A 12-SSIP Exposed Pad, Formed Leads

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

FAM65CR51DZ2
Datasheet:

FAM65CR51DZ2 Datasheet (PDF)
Product:

IGBT Silicon Modules
Configuration:

Dual
Pd - Power Dissipation:

160 W
Minimum Operating Temperature:

- 40 C
EDA/CAD Models:

Request Free CAD Models for FAM65CR51DZ2

Email: [email protected]

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Tel: +852 95804164

FAM65CR51DZ2 General Description

Meet the FAM65CR51DZ – a power integrated MOSFET module that sets the standard for excellence in multi-phase and semi-bridgeless power factor correction. Equipped with a boost converter stage, this module delivers unparalleled performance and reliability in managing power flow and optimizing power factor. Whether you're working on industrial equipment, consumer electronics, or renewable energy systems, the FAM65CR51DZ is the perfect solution for your power management needs

Key Features

Integrated SIP or DIP Boost Converter Stage Power Module for On−board Charger (OBC) in EV−PHEV
5 kV/1 sec Electrically Isolated Substrate for Easy Assembly
Compact Design for Low Total Module Resistance
Module Serialization for Full Traceability
Lead Free, RoHS and UL94V−0 Compliant
Automotive Qualified per AEC Q101 and AQG324 Guidelines

Application

PFC Stage of an On−board Charger in PHEV−HEV

Specifications

Product Category:	IGBT Modules	Product:	IGBT Silicon Modules
Configuration:	Dual	Pd - Power Dissipation:	160 W
Minimum Operating Temperature:	- 40 C	Maximum Operating Temperature:	+ 125 C
Packaging:	Tube	Mounting Style:	Through Hole
Product Type:	IGBT Modules	Factory Pack Quantity:	1
Subcategory:	IGBTs	Tags	FAM65, FAM6, FAM
Product Category	IGBT Modules	Product	IGBT Silicon Modules
Configuration	Dual	Collector- Emitter Voltage VCEO Max	650 V
Collector-Emitter Saturation Voltage	-	Continuous Collector Current at 25 C	33 A
Gate-Emitter Leakage Current	-	Pd - Power Dissipation	160 W
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 125 C
Mounting Style	Through Hole	Product Type	IGBT Modules
Factory Pack Quantity	12	Subcategory	IGBTs
Technology	Si	Unit Weight	1.230532 oz