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See Technical Specifications

FAM65V05DF1 +BOM

IGBT - Intelligent Power Modules (IPM) ROHS

Manufacturer:

Onsemi
Mfr.Part #:

FAM65V05DF1
Datasheet:

FAM65V05DF1 Datasheet (PDF)
Product:

IGBT Silicon Modules
Configuration:

3-Phase Inverter
Collector- Emitter Voltage VCEO Max:

650 V
Collector-Emitter Saturation Voltage:

1.65 V

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FAM65V05DF1 General Description

The FAM65V05DF1 is a game-changer in the world of Intelligent Power Modules, offering a voltage of 650 V and a current of 50 A. This AEC-Qualified module is specifically designed to cater to the needs of hybrid and electric vehicles, providing a high-performance auxiliary inverter output stage. By integrating optimized gate drivers, Field Stop Trench IGBT, and soft recovery Diodes, this module ensures minimal EMI and losses, making it a top choice for those looking to enhance efficiency and performance

Key Features

Innovative materials and processes
Enhanced thermal management
Better performance at lower power consumption
Improved reliability and fault tolerance

Specifications

Product Category	IGBT Modules	Product	IGBT Silicon Modules
Configuration	3-Phase Inverter	Collector- Emitter Voltage VCEO Max	650 V
Collector-Emitter Saturation Voltage	1.65 V	Continuous Collector Current at 25 C	50 A
Gate-Emitter Leakage Current	3 uA	Pd - Power Dissipation	333 W
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 150 C
Qualification	AEC-Q101	Product Type	IGBT Modules
Series	FAM65V05DF1	Factory Pack Quantity	60
Subcategory	IGBTs	Unit Weight	0.539692 oz