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FSX017LG +BOM

Gallium arsenide device with low noise figure and high ga

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

FSX017LG General Description

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN

Key Features

  • Three Integrated Phase-locked Loops
  • Ultra Wide Divide Counters (8-bit Q, 11-bit P, and 7-bit Post Divide)
  • Improved Linear Crystal Load Capacitors
  • Flash Programmability
  • Field Programmable
  • Low-jitter, High-accuracy Outputs
  • Power Management Options (Shutdown, OE, Suspend)
  • Configurable Crystal Drive Strength
  • Frequency Select through three External LVTTL Inputs
  • 3.3 V Operation
  • 16-pin TSSOP andSOIC Packages
  • CyClocksRT™ Support

Specifications

Part Life Cycle Code Obsolete Pin Count 4
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.21.00.75 Additional Feature HIGH RELIABILITY
Case Connection SOURCE Configuration SINGLE
DS Breakdown Voltage-Min 8 V FET Technology JUNCTION
Highest Frequency Band X BAND JESD-30 Code X-CXDB-F4
Number of Elements 1 Number of Terminals 4
Operating Mode DEPLETION MODE Operating Temperature-Max 175 °C
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 0.22 W
Qualification Status Not Qualified Surface Mount YES
Terminal Form FLAT Terminal Position UNSPECIFIED
Transistor Application AMPLIFIER Transistor Element Material GALLIUM ARSENIDE

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