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See Technical Specifications

HGTG20N60B3_Q +BOM

N-channel IGBT for reliable DC-DC conversion

Manufacturer:

onsemi
Mfr.Part #:

HGTG20N60B3_Q
Datasheet:

HGTG20N60B3_Q Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Models:

Request Free CAD Models for HGTG20N60B3_Q

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable HGTG20N60B3_Q driver, produced by onsemi. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the HGTG20N60B3_Q.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	1.8 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	40 A
Pd - Power Dissipation	165 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C	Series	HGTG20N60
Continuous Collector Current	40 A	Continuous Collector Current Ic Max	40 A
Gate-Emitter Leakage Current	+/- 100 nA	Height	4.82 mm
Length	15.87 mm	Product Type	IGBT Transistors
Factory Pack Quantity	300	Subcategory	IGBTs
Width	20.82 mm	Unit Weight	1.340411 oz