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The HGTG20N60C3 device is a type of Insulated Gate Bipolar Transistor, commonly known as IGBT
TO-247-3Manufacturer:
onsemi
Mfr.Part #:
HGTG20N60C3
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
EDA/CAD Models:
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Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Continuous Collector Current at 25 C | 45 A | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | HGTG20N60 |
Continuous Collector Current Ic Max | 45 A | Height | 20.82 mm |
Length | 15.87 mm | Product Type | IGBT Transistors |
Subcategory | IGBTs | Width | 4.82 mm |
Unit Weight | 1.340411 oz |
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