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HGTG20N60C3 +BOM

The HGTG20N60C3 device is a type of Insulated Gate Bipolar Transistor, commonly known as IGBT

Key Features

  • 45A, 600V, TC = 25°C
  • 600V Switching SOA Capability
  • Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150°C
  • Short Circuit Rating
  • Low Conduction Loss
  • Related Literature
  • - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 45 A Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series HGTG20N60
Continuous Collector Current Ic Max 45 A Height 20.82 mm
Length 15.87 mm Product Type IGBT Transistors
Subcategory IGBTs Width 4.82 mm
Unit Weight 1.340411 oz

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