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HY5PS121621CFP-25 +BOM

DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, LEAD FREE, FBGA-84

Key Features

  • Hall effect measuring principle
  • Galvanic isolation between primary and secondary circuit
  • Isolation voltage 2500 V~
  • Compact design for PCB mounting
  • Low power consumption
  • Extended measuring range (3 x IPN)
  • Insulated plastic case recognized according to UL 94-V0.

Specifications

Part Life Cycle Code Obsolete Pin Count 84
Reach Compliance Code ECCN Code EAR99
HTS Code 8542.32.00.28 Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.5 ns Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz I/O Type COMMON
Interleaved Burst Length 4,8 JESD-30 Code R-PBGA-B84
JESD-609 Code e1 Length 13 mm
Memory Density 536870912 bit Memory IC Type DDR2 DRAM
Memory Width 16 Number of Functions 1
Number of Ports 1 Number of Terminals 84
Number of Words 33554432 words Number of Words Code 32000000
Operating Mode SYNCHRONOUS Operating Temperature-Max 85 °C
Operating Temperature-Min Organization 32MX16
Output Characteristics 3-STATE Power Supplies 1.8 V
Qualification Status Not Qualified Refresh Cycles 8192
Seated Height-Max 1.2 mm Self Refresh YES
Sequential Burst Length 4,8 Standby Current-Max 0.008 A
Supply Current-Max 0.34 mA Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES Technology CMOS
Temperature Grade OTHER Terminal Finish TIN SILVER COPPER
Terminal Form BALL Terminal Pitch 0.8 mm
Terminal Position BOTTOM Width 10.5 mm

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