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IGW03N120H2 +BOM

Efficient power conversion for industrial-grade projects

IGW03N120H2 General Description

IGBT 1200 V 9.6 A 62.5 W Through Hole PG-TO247-3-1

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Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 2.2 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 9.6 A
Pd - Power Dissipation 62.5 W Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Series IGW03N120
Continuous Collector Current Ic Max 9.6 A Height 20.95 mm
Length 15.9 mm Product Type IGBT Transistors
Factory Pack Quantity 240 Subcategory IGBTs
Width 5.3 mm Part # Aliases IGW3N12H2XK SP000014182 IGW03N120H2FKSA1
Unit Weight 1.340411 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $4.474 $4.47
200+ $1.732 $346.40
500+ $1.671 $835.50
1000+ $1.640 $1,640.00

The prices below are for reference only.

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