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See Technical Specifications

IGW20N60H3 +BOM

Reliable and durable TO-247-3 package ensures long-term performance and reliability

Manufacturer:

Infineon
Mfr.Part #:

IGW20N60H3
Datasheet:

IGW20N60H3 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Models:

Request Free CAD Models for IGW20N60H3

IGW20N60H3 General Description

The IGW20N60H3 is a high-speed 600 V, 20 A single TRENCHSTOP™ IGBT3 in a TO247 package. It is designed to offer the best balance between switching and conduction losses, making it ideal for high performance applications. The key feature of this IGBT3 family is its MOSFET-like turn-off switching behavior, which results in low turn-off losses. This makes it a highly efficient and reliable choice for power electronics designs that require high-speed switching with minimal losses

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	1.95 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	40 A
Pd - Power Dissipation	170 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Series	HighSpeed 3
Gate-Emitter Leakage Current	100 nA	Product Type	IGBT Transistors
Factory Pack Quantity	240	Subcategory	IGBTs
Tradename	TRENCHSTOP	Part # Aliases	IGW2N6H3XK SP000852238 IGW20N60H3FKSA1
Unit Weight	0.213288 oz