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IGBT NPT, Trench Field Stop 600 V 20 A 110 W Through Hole PG-TO220-3-1
TO-220-3Manufacturer:
Mfr.Part #:
IKP10N60TXKSA1
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
EDA/CAD Models:
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IGBT NPT, Trench Field Stop 600 V 20 A 110 W Through Hole PG-TO220-3-1
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.5 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 24 A |
Pd - Power Dissipation | 110 W | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 175 C | Series | Trenchstop IGBT3 |
Gate-Emitter Leakage Current | 100 nA | Product Type | IGBT Transistors |
Factory Pack Quantity | 500 | Subcategory | IGBTs |
Tradename | TRENCHSTOP | Part # Aliases | IKP10N60T SP000683062 |
Unit Weight | 0.063493 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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