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IKW30N65ES5XKSA1 +BOM

IGBT Trench 650 V 62 A 188 W Through Hole PG-TO247-3

IKW30N65ES5XKSA1 General Description

IGBT Trench 650 V 62 A 188 W Through Hole PG-TO247-3

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Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.35 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 62 A
Pd - Power Dissipation 188 W Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C Series TRENCHSTOP 5 S5
Gate-Emitter Leakage Current 100 nA Height 20.7 mm
Length 15.87 mm Product Type IGBT Transistors
Factory Pack Quantity 240 Subcategory IGBTs
Tradename TRENCHSTOP Width 5.31 mm
Part # Aliases IKW30N65ES5 SP001319678 Unit Weight 0.213358 oz

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In Stock: 7,072

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