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See Technical Specifications

IMT1AT110 +BOM

Bipolar Transistor Array

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

IMT1AT110
Datasheet:

IMT1AT110 Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

PNP
Configuration:

Dual
Collector- Emitter Voltage VCEO Max:

50 V
EDA/CAD Models:

Request Free CAD Models for IMT1AT110

IMT1AT110 General Description

IMT1AT110 is a cutting-edge product that offers the convenience of two transistors integrated into a compact package. This innovative design opens up a world of possibilities for a wide range of applications, from pre-amplifier circuits to high-frequency oscillators. These devices are perfect for use in driver ICs and other circuitry where space is at a premium

Key Features

1) Two 2SA1037AK chips in a EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating interference.
Structure
Epitaxial planar type
PNP silicon transistor

Application

AMPLIFIER

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	PNP	Configuration	Dual
Collector- Emitter Voltage VCEO Max	50 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	500 mV
Maximum DC Collector Current	150 mA	Pd - Power Dissipation	300 mW
Gain Bandwidth Product fT	140 MHz	Minimum Operating Temperature	-
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	- 150 mA
DC Collector/Base Gain hfe Min	120	DC Current Gain hFE Max	560
Height	1.1 mm	Length	2.9 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Width	1.6 mm	Part # Aliases	IMT1A
Unit Weight	0.002012 oz