Payment Method
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
Transistor IGBT Chip with DPAK Package - N-channel, 600V Voltage Rating, 9A Current Capacity, Power Dissipation 38mW
TO-252-3Manufacturer:
Mfr.Part #:
IRG4RC10KD
Datasheet:
Launch_date:
Jan 2, 2001
Last_inspection_date:
16 OCT 2022
Supplier_cage_code:
C6489
Schedule_b:
8541290080
EDA/CAD Models:
Send all BOMs to
[email protected],
or fill out the form below for a quote on IRG4RC10KD. Guaranteed response within
12hr.
Please fill in the short form below and we will provide you the quotation immediately.
In a world where efficiency and reliability are paramount, the IRG4RC10KD stands out as a high-power insulated gate bipolar transistor (IGBT) that delivers on all fronts. Its impressive specifications, including a maximum collector current rating of 15A and a collector-emitter voltage rating of 600V, make it a versatile solution for applications that require high efficiency and fast switching speeds. With its low on-state resistance and high current capability, this IGBT excels in inverters, motor drives, and induction heating systems, providing a seamless and efficient power conversion experience. Its compact design and high thermal performance ensure easy integration and reliable operation, making the IRG4RC10KD a top choice for demanding high-power applications
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Tighter parameter distribution and higher efficiency than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
place | launch_date | Jan 2, 2001 | |
last_inspection_date | 16 OCT 2022 | supplier_cage_code | C6489 |
htsusa | schedule_b | 8541290080 | |
ppap | False | aec | |
Series | - | IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 9 A |
Current - Collector Pulsed (Icm) | 18 A | Vce(on) (Max) @ Vge, Ic | 2.62V @ 15V, 5A |
Power - Max | 38 W | Switching Energy | 250µJ (on), 140µJ (off) |
Input Type | Standard | Gate Charge | 19 nC |
Td (on/off) @ 25°C | 49ns/97ns | Test Condition | 480V, 5A, 100Ohm, 15V |
Reverse Recovery Time (trr) | 28 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
After-Sales & Settlement Related
Payment Method
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
BSS88
Infineon Technologies Corporation
1000+ $0.970
IRG4PC50UD
Infineon Technologies Corporation
Trans IGBT Chip N-CH 600V 55A 200W 3-Pin(3+Tab) TO-247AC Tube
IRG4PC40K
Infineon Technologies Corporation
Infineon's IRG4PC40K IGBT, designed for a maximum current of 42 amps and a voltage of 600 volts, enclosed in a TO-247AC package
IRGS14C40L
Infineon Technologies Corporation
IGBT 430 V 20 A 125 W Surface Mount D2PAK
IRGB4062D
Infineon Technologies Corporation
Trans IGBT Chip N-CH 600V 48A 250mW 3-Pin(3+Tab) TO-220AB Tube
Impressed with the prompt delivery by Avaq! Ordered the THGBMJG7C2LBAU8 components and received them ahead of schedule. Excellent service! - Michael W.