This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IS61NLP102436B-200B3LI +BOM

Designed for fast data processing

Manufacturer:

INTEGRATED SILICON SOLUTION INC
Mfr.Part #:

IS61NLP102436B-200B3LI
Datasheet:

IS61NLP102436B-200B3LI Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

165
Reach Compliance Code:

compliant
ECCN Code:

3A991.B.2.A
EDA/CAD Models:

Request Free CAD Models for IS61NLP102436B-200B3LI

IS61NLP102436B-200B3LI General Description

Enter the advanced realm of memory modules with the IS61NLP102436B-200B3LI from Integrated Silicon Solution Inc. (ISSI). This cutting-edge synchronous DRAM module packs a punch with its impressive 1 Gb capacity and expansive 36-bit data width. Running at a formidable speed of 200 MHz, this module is tailor-made for mobile devices and power-sensitive applications that require efficient data processing without draining the battery. With support for burst lengths of 2 or 4 and programmable READ or WRITE burst sequences, the IS61NLP102436B-200B3LI offers unparalleled versatility to meet diverse data processing needs. Its programmable CAS latency of 3 ensures swift data access and transfer speeds, enabling seamless operation even during demanding tasks. The module's self-refresh mode is a game-changer for conserving power during idle periods, making it an environmentally conscious choice that complies with RoHS standards. Compatible with industry-standard interfaces, the IS61NLP102436B-200B3LI is the memory module of choice for those seeking high performance, efficiency, and eco-friendliness in one package

Key Features

100 percent bus utilization
No wait cycles between Read and Write
Internal self-timed write cycle
Individual Byte Write Control
Single R/W (Read/Write) control pin
Clock controlled, registered address, data and control
Interleaved or linear burst sequence control using MODE input
Three chip enables for simple depth expansion and address pipelining
Power Down mode
Common data inputs and data outputs
CKE pin to enable clock and suspend operation
JEDEC 100-pin TQFP and 165-ball PBGA packages
Power supply: NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%) NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
Industrial temperature available
Lead-free available

Specifications

Part Life Cycle Code	Active	Pin Count	165
Reach Compliance Code	compliant	ECCN Code	3A991.B.2.A
HTS Code	8542.32.00.41	Factory Lead Time	16 Weeks
Access Time-Max	3.1 ns	Clock Frequency-Max (fCLK)	200 MHz
I/O Type	COMMON	JESD-30 Code	R-PBGA-B165
Length	15 mm	Memory Density	37748736 bit
Memory IC Type	ZBT SRAM	Memory Width	36
Number of Functions	1	Number of Terminals	165
Number of Words	1048576 words	Number of Words Code	1000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	1MX36
Output Characteristics	3-STATE	Parallel/Serial	PARALLEL
Power Supplies	2.5/3.3,3.3 V	Qualification Status	Not Qualified
Seated Height-Max	1.2 mm	Standby Current-Max	0.12 A
Standby Voltage-Min	3.14 V	Supply Current-Max	0.26 mA
Supply Voltage-Max (Vsup)	3.465 V	Supply Voltage-Min (Vsup)	3.135 V
Supply Voltage-Nom (Vsup)	3.3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Form	BALL	Terminal Pitch	1 mm
Terminal Position	BOTTOM	Width	13 mm
Programmabe	Not Verified	Memory Type	Volatile
Memory Format	SRAM	Memory Size	36Mbit
Memory Organization	1M x 36	Memory Interface	Parallel
Clock Frequency	200 MHz	Access Time	3.1 ns
Voltage - Supply	3.135V ~ 3.465V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	IS61NLP102436