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See Technical Specifications

IS61WV102416BLL-10MI +BOM

The IS61WV102416BLL-10MI is an asynchronous SRAM suitable for various applications requiring fast and reliable data storage

Manufacturer:

ISSI
Mfr.Part #:

IS61WV102416BLL-10MI
Datasheet:

IS61WV102416BLL-10MI Datasheet (PDF)
Memory Size:

16 Mbit
Organization:

1 M x 16
Access Time:

10 ns
Interface Type:

Parallel
EDA/CAD Models:

Request Free CAD Models for IS61WV102416BLL-10MI

IS61WV102416BLL-10MI General Description

When it comes to high-performance data storage, the IS61WV102416BLL-10MI stands head and shoulders above the competition. With its lightning-fast 100MHz operating frequency and versatile voltage range of 1.65V to 2.2V, this chip is tailor-made for applications that demand speed and reliability. Whether you're designing a cutting-edge gaming system or a mission-critical server, this RAM chip has what it takes to exceed your expectations

Key Features

High-speed access times: 8, 10, 20 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for greater noise immunity
Easy memory expansion with CE and OE options
CE power-down
Fully static operation: no clock or refresh required
TTL compatible inputs and outputs
Single power supply
Vdd 1.65V to 2.2V (IS61WV102416ALL)
speed = 20ns for Vdd 1.65V to 2.2V
Vdd 2.4V to 3.6V (IS61/64WV102416BLL)
speed = 10ns for Vdd 2.4V to 3.6V
speed = 8ns for Vdd 3.3V + 5%
Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
Industrial and Automotive Temperature Support
Lead-free available
Data control for upper and lower bytes

Specifications

Product Category	SRAM	Memory Size	16 Mbit
Organization	1 M x 16	Access Time	10 ns
Interface Type	Parallel	Supply Voltage - Max	3.6 V
Supply Voltage - Min	2.4 V	Supply Current - Max	95 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Mounting Style	SMD/SMT	Data Rate	SDR
Memory Type	SDR	Moisture Sensitive	Yes
Number of Ports	1	Product Type	SRAM
Series	IS61WV102416BLL	Factory Pack Quantity	210
Subcategory	Memory & Data Storage	Type	Asynchronous
Pbfree Code	No	Part Life Cycle Code	Obsolete
Pin Count	48	Reach Compliance Code	compliant
ECCN Code	3A991.B.2.A	HTS Code	8542.32.00.41
Access Time-Max	10 ns	I/O Type	COMMON
JESD-30 Code	R-PBGA-B48	JESD-609 Code	e0
Length	11 mm	Memory Density	16777216 bit
Memory IC Type	STANDARD SRAM	Memory Width	16
Moisture Sensitivity Level	3	Number of Functions	1
Number of Terminals	48	Number of Words	1048576 words
Number of Words Code	1000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Output Characteristics	3-STATE	Parallel/Serial	PARALLEL
Peak Reflow Temperature (Cel)	235	Power Supplies	2.5/3.3 V
Qualification Status	Not Qualified	Seated Height-Max	1.2 mm
Standby Current-Max	0.02 A	Standby Voltage-Min	1.2 V
Supply Current-Max	0.095 mA	Supply Voltage-Max (Vsup)	3.6 V
Supply Voltage-Min (Vsup)	2.4 V	Supply Voltage-Nom (Vsup)	3.3 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Finish	Tin/Lead (Sn/Pb)
Terminal Form	BALL	Terminal Pitch	0.75 mm
Terminal Position	BOTTOM	Time@Peak Reflow Temperature-Max (s)	30
Width	9 mm