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See Technical Specifications

IS66WVE4M16EALL-70BLI +BOM

The IS66WVE4M16EALL-70BLI product is a Cellular RAM Pseudo SRAM featuring 4Mx16 capacity, compatible with voltages ranging from 1

Manufacturer:

Integrated Silicon Solution, Inc
Mfr.Part #:

IS66WVE4M16EALL-70BLI
Datasheet:

IS66WVE4M16EALL-70BLI Datasheet (PDF)
Access Time:

70 ns
Interface:

Parallel
Max Operating Temperature:

85 °C
Memory Size:

8 MB
EDA/CAD Models:

Request Free CAD Models for IS66WVE4M16EALL-70BLI

IS66WVE4M16EALL-70BLI General Description

The IS66WVE4M16EALL-70BLI pseudo SRAM from ISSI is a feature-rich memory solution designed to meet the stringent performance and power requirements of modern electronic systems. This versatile PSRAM offers a perfect combination of high density, fast access time, low-power operation, and environmental compliance to address the evolving needs of various market segments such as networking, telecommunications, industrial, and consumer electronics. Its small footprint, wide voltage range, and asynchronous/page access characteristics make it an ideal choice for designers looking to enhance the speed, efficiency, and reliability of their next-generation products

Specifications

Access Time	70 ns	Interface	Parallel
Max Operating Temperature	85 °C	Memory Size	8 MB
Memory Type	RAM	Min Operating Temperature	-40 °C
Schedule B	8542320015	Programmabe	Not Verified
Memory Format	PSRAM	Technology	PSRAM (Pseudo SRAM)
Memory Organization	4M x 16	Memory Interface	Parallel
Write Cycle Time - Word, Page	70ns	Voltage - Supply	1.7V ~ 1.95V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	IS66WVE4M16