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See Technical Specifications

IXDN414PI +BOM

High-performance low-side driver for MOSFET and IGBT applications

Manufacturer:

IXYS
Mfr.Part #:

IXDN414PI
Datasheet:

IXDN414PI Datasheet (PDF)
Programmabe:

Not Verified
Driven Configuration:

Low-Side
Channel Type:

Single
Number Of Drivers:

1
EDA/CAD Models:

Request Free CAD Models for IXDN414PI

IXDN414PI General Description

The IXDN414PI, a non-inverting dual MOSFET driver, is the ultimate choice for applications that demand high-speed and high-voltage performance. Whether it's motor control, power supplies, or Class D amplifiers, this device is engineered to drive high-power N-channel MOSFETs with precision and efficiency. Its ability to drive both the high-side and low-side MOSFETs in a full-bridge configuration ensures optimal switching and control of power circuits. Operating on a supply voltage ranging from 10V to 35V, it offers a maximum output current of 2A, making it a reliable choice for various power applications

Key Features

Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes
Latch-Up Protected Over Entire Operating Range
High Peak Output Current: 14A Peak
Wide Operating Range: 4.5V to 35V
-55 °C to 125 °C Extended Operating Temperature Standard
High Capacitive Load Drive Capability: 15nF in <30ns
Matched Rise And Fall Times
Low Propagation Delay Time
Low Output Impedance
Low Supply Current

Specifications

Programmabe	Not Verified	Driven Configuration	Low-Side
Channel Type	Single	Number of Drivers	1
Gate Type	IGBT, N-Channel, P-Channel MOSFET	Voltage - Supply	4.5V ~ 35V
Logic Voltage - VIL, VIH	0.8V, 3.5V	Current - Peak Output (Source, Sink)	14A, 14A
Input Type	Non-Inverting	Rise / Fall Time (Typ)	22ns, 20ns
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXDN414