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See Technical Specifications

IXDN430CI +BOM

30 Amps Gate Drivers with 0.4 Rds at 40V

Manufacturer:

IXYS
Mfr.Part #:

IXDN430CI
Datasheet:

IXDN430CI Datasheet (PDF)
Programmabe:

Not Verified
Driven Configuration:

Low-Side
Channel Type:

Single
Number Of Drivers:

1
EDA/CAD Models:

Request Free CAD Models for IXDN430CI

IXDN430CI General Description

When it comes to high-speed switching with minimal power loss, the IXDN430CI is the perfect solution. This dual MOSFET driver IC is designed for driving N-channel power MOSFETs in half-bridge configurations, making it an ideal choice for applications requiring high-speed switching, such as power supplies, motor drives, and DC-DC converters. With a peak output current of 2A per channel and a wide supply voltage range of 4.5V to 35V, it offers exceptional performance. The 25ns propagation delay and shoot-through protection ensure efficient operation and device protection, while the compact 8-lead SOIC package and thermal shutdown feature make it suitable for space-constrained applications, providing peace of mind during operation

Key Features

Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes
Latch-Up Protected
High Peak Output Current: 30A Peak
Wide Operating Range: 8.5V to 35V
Under Voltage Lockout Protection
Ability to Disable Output under Faults
High Capacitive Load
Drive Capability: 5600 pF in <25ns
Matched Rise And Fall Times
Low Propagation Delay Time
Low Output Impedance
Low Supply Current

Specifications

Programmabe	Not Verified	Driven Configuration	Low-Side
Channel Type	Single	Number of Drivers	1
Gate Type	IGBT, N-Channel, P-Channel MOSFET	Voltage - Supply	8.5V ~ 35V
Logic Voltage - VIL, VIH	0.8V, 3.5V	Current - Peak Output (Source, Sink)	30A, 30A
Input Type	Non-Inverting	Rise / Fall Time (Typ)	18ns, 16ns
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXDN430