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See Technical Specifications

JR28F032M29EWBA +BOM

High-speed storage

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

JR28F032M29EWBA
Datasheet:

JR28F032M29EWBA Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

JR28F032M29EWBA General Description

Boasting impressive read and write speeds of up to 50MHz and 10MHz respectively, the JR28F032M29EWBA delivers exceptional performance, making it ideal for demanding applications. Furthermore, its built-in error correction and wear-leveling algorithms guarantee the reliability and longevity of stored data, making it a suitable choice for mission-critical operations. Additionally, the chip incorporates advanced security features such as AES encryption and Secure Erase capabilities, ensuring the protection of sensitive information from unauthorized access

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	32Mbit	Memory Organization	4M x 8, 2M x 16
Memory Interface	Parallel	Write Cycle Time - Word, Page	70ns
Access Time	70 ns	Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	JR28F032M29