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See Technical Specifications

K4B4G1646E-BCK0 +BOM

Manufacturer:

Samsung Electronics
Mfr.Part #:

K4B4G1646E-BCK0
Datasheet:

K4B4G1646E-BCK0 Datasheet (PDF)
ECCN (US):

EAR99
HTS:

8542.32.00.36
Automotive:

No
PPAP:

No
EDA/CAD Models:

Request Free CAD Models for K4B4G1646E-BCK0

K4B4G1646E-BCK0 General Description

Upgrade your laptop, desktop, server, or other electronic devices with the Samsung K4B4G1646E-BCK0 DDR4 memory module and experience a significant boost in speed and efficiency. This module is engineered to deliver fast data transfer rates and increased bandwidth, making it ideal for multitasking and high-performance computing. The compact size and easy installation process make upgrading your memory a breeze, allowing you to enjoy seamless operation and enhanced productivity

Key Features

Wide operating temperature range
RoHS compliance assured
Eco-friendly packaging
Compact 96-ball FBGA package

Application

Experience faster access speeds
Optimize your computing power
Maximize your storage potential

Specifications

ECCN (US)	EAR99	Part Status	LTB
HTS	8542.32.00.36	Automotive	No
PPAP	No	DRAM Type	DDR3 SDRAM
Chip Density (bit)	4G	Organization	256Mx16
Number of Internal Banks	8	Number of Words per Bank	32M
Number of Bits/Word (bit)	16	Data Bus Width (bit)	16
Maximum Clock Rate (MHz)	1600	Maximum Access Time (ns)	0.225
Address Bus Width (bit)	18	Interface Type	SSTL_1.5
Minimum Operating Supply Voltage (V)	1.425	Maximum Operating Supply Voltage (V)	1.575
Operating Current (mA)	115	Minimum Operating Temperature (°C)	0
Maximum Operating Temperature (°C)	95	Number of I/O Lines (bit)	16
Mounting	Surface Mount	PCB changed	96
Pin Count	96	Lead Shape	Ball