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K4J52324QC-BC14 +BOM

DDR DRAM 16MX32 0.26ns CMOS PBGA136

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K4J52324QC-BC14 General Description

GRAPHIC MEMORY COMPONENT PRODUCT GUIDES

Samsung Semiconductor Inventory

Key Features

  • Memory clock speed: 1066MHz
  • Maximum burst length of 8
Samsung Semiconductor Original Stock

Application

  • High-tech gadgets
  • Advanced tech gear
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  • State-of-the-art technology
Samsung Semiconductor Inventory

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
ECCN Code EAR99 HTS Code 8542.32.00.28
Access Time-Max 0.26 ns Clock Frequency-Max (fCLK) 714 MHz
I/O Type COMMON Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B136 JESD-609 Code e3
Memory Density 536870912 bit Memory IC Type DDR3 DRAM
Memory Width 32 Moisture Sensitivity Level 1
Number of Terminals 136 Number of Words 16777216 words
Number of Words Code 16000000 Operating Temperature-Max 85 °C
Organization 16MX32 Output Characteristics 3-STATE
Power Supplies 1.8 V Qualification Status Not Qualified
Refresh Cycles 8192 Sequential Burst Length 4,8
Standby Current-Max 0.09 A Supply Current-Max 0.935 mA
Supply Voltage-Nom (Vsup) 1.8 V Surface Mount YES
Technology CMOS Temperature Grade OTHER
Terminal Finish MATTE TIN Terminal Form BALL
Terminal Pitch 0.8 mm Terminal Position BOTTOM

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In Stock: 7,011

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