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See Technical Specifications

K6X8016T3B-UF55 +BOM

CMOS PDSO44 Package

Manufacturer:

SAMSUNG
Mfr.Part #:

K6X8016T3B-UF55
Datasheet:

K6X8016T3B-UF55 Datasheet (PDF)
ISSI:

ISSI
SRAM:

SRAM
Details:

Details
8 Mbit:

8 Mbit
EDA/CAD Models:

Request Free CAD Models for K6X8016T3B-UF55

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K6X8016T3B-UF55 General Description

GENERAL DESCRIPTIONThe K6X8016C3B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.FEATURES• Process Technology: Full CMOS• Organization: 512K x16• Power Supply Voltage: 4.5~5.5V• Low Data Retention Voltage: 2.0V(Min)• Three state output and TTL Compatible• Package Type: 44-TSOP2-400F

Key Features

Process Technology: Full CMOS
Organization: 512K x16
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2.0V(Min)
Three state output and TTL Compatible
Package Type: 44-TSOP2-400F

Specifications

ISSI	ISSI	SRAM	SRAM
Details	Details	8 Mbit	8 Mbit
512 k x 16	512 k x 16	55 ns	55 ns
18 MHz	18 MHz	Parallel	Parallel
3.6 V	3.6 V	2.5 V	2.5 V
4 mA	4 mA	- 40 C	- 40 C
+ 85 C	+ 85 C	SMD/SMT	SMD/SMT
TSOP-44	TSOP-44	Tray	Tray
SDR	SDR	Yes	Yes
1	1	IS62WV51216BLL	IS62WV51216BLL
135	135	Memory & Data Storage	Memory & Data Storage
Asynchronous	Asynchronous	0.235524 oz	0.235524 oz