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K9F8G08U0M-PCB0 +BOM

Key Features

Voltage Supply : 2.7V~3.6V

Organization

- Memory Cell Array : (64M + 2,048K)bit x 8bit

- Data Register : (512 + 16)bit x8bit multipled by four planes

Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

528-Byte Page Read Operation

- Random Access : 12ms(Max.)

- Serial Page Access : 50ns(Min.)

Fast Write Cycle Time

- Program time : 200ms(Typ.)

- Block Erase Time : 2ms(Typ.)

Command/Address/Data Multiplexed I/O Port

Hardware Data Protection

- Program/Erase Lockout During Power Transitions

Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

Command Register Operation

Intelligent Copy-Back Operation

Package :

- K9F1208U0M-YCB0, K9F1208U0M-YIB0 : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

Simultaneous Four Page/Block Program/Erase

Specifications

ECCN (US) 3A991.b.1.a Part Status Obsolete
HTS 8542.32.00.71 Automotive No
PPAP No Cell Type SLC NAND
Chip Density (bit) 8G Architecture Sectored
Boot Block No Block Organization Symmetrical
Address Bus Width (bit) 30 Sector Size 256Kbyte x 4096
Page Size 4Kbyte Number of Bits/Word (bit) 8
Number of Words 1G Programmability Yes
Timing Type Asynchronous Max. Access Time (ns) 25000
Maximum Erase Time (s) 0.002/Block Maximum Page Access Time (ns) 25(Min)
Maximum Programming Time (ms) 0.7 Interface Type Parallel
Minimum Operating Supply Voltage (V) 2.7 Typical Operating Supply Voltage (V) 3.3
Maximum Operating Supply Voltage (V) 3.6 Page Read Current (mA) 30
Program Current (mA) 30 Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 125 Supplier Temperature Grade Industrial
Command Compatible No ECC Support Yes
Support of Page Mode Yes Mounting Surface Mount
PCB changed 48 Pin Count 48
Lead Shape Gull-wing

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