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K9GBG08U0A-SCB0 +BOM

Key Features

Voltage Supply- 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V- 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6VOrganization- Memory Cell Array : (512M + 16M) x 8bit- Data Register : (2K + 64) x 8bitAutomatic Program and Erase- Page Program : (2K + 64)Byte- Block Erase : (256K + 8K)BytePage Read Operation- Page Size : (2K + 64)Byte- Random Read : 60s(Max.)- Serial Access : 30ns(Min.)Memory Cell : 2bit / Memory Cell512M x 8 Bit / 1G x 8 Bit NAND Flash MemoryFast Write Cycle Time- Program time : 800s(Typ.)- Block Erase Time : 1.5ms(Typ.)Command/Address/Data Multiplexed I/O PortHardware Data Protection- Program/Erase Lockout During Power TransitionsReliable CMOS Floating-Gate Technology- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)- Data Retention : 10 YearsCommand Register OperationUnique ID for Copyright ProtectionPackage :- K9G4G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE48 - Pin TSOP1(12 x 20 / 0.5 mm pitch)- K9G4G08U0A-ICB0/IIB052 - Pin ULGA (12 x 17 / 1.00 mm pitch)- K9L8G08U1A-ICB0/IIB052 - Pin ULGA (12 x 17 / 1.00 mm pitch)- K9G4G08B0A : MCP(TBD)

Specifications

Product Category Memory ICs

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In Stock: 5,575

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