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K9LBG08U0D-PCB0 +BOM

K9LBG08U0D-PCB0 SAMSUNG

Key Features

Voltage Supply

- 3.3V Device : 2.7V ~ 3.6V

Organization

- Memory Cell Array : (2G + 109M) x 8bit

- Data Register : (4K + 218) x 8bit

Automatic Program and Erase

- Page Program : (4K + 218)Byte

- Block Erase : (512K + 27.25K)Byte

Page Read Operation

- Page Size : (4K + 218)Byte

- Random Read : 60s(Max.)

- Serial Access : 30ns(Min.)

*K9XDG08U5D: 50ns(Min.)

Memory Cell : 2bit / Memory Cell

Fast Write Cycle Time

- Program time : 800s(Typ.)

- Block Erase Time : 1.5ms(Typ.)

Command/Address/Data Multiplexed I/O Port

Hardware Data Protection

- Program/Erase Lockout During Power Transitions

Reliable CMOS Floating-Gate Technology

- Endurance : TBD Cycles(with TBD ECC)

- Data Retention : TBD Years

Command Register Operation

Unique ID for Copyright Protection

Package :

- K9LBG08U0D-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9HCG08U1D-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9MDG08U5D-PCB0/PIB0: Two K9HCG08U1D packages stacked

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) : Pb-FREE PACKAGE

- K9HCG08U1D-ICB0/IIB0

52 - Pin TLGA (12 x 17 / 1.00 mm pitch)

- K9PDG08U5D-LCB0/LIB0 : Pb/Halogen-FREE PACKAGE

52 - Pin TLGA (14 x 18 / 1.00 mm pitch)

Application

GENERAL DESCRIPTION Offered in 4Gx8bit, the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1,744M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 4,314-byte page and an erase operation can be performed in typical 1.5ms on a (512K+27.25K)byte block. Data in the data register can be read out at 30ns(K9XDG08U5D: 50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9LBG08U0D′s extended reliability of TBD cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9LBG08U0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Specifications

ECCN (US) EAR99 Part Status Active
HTS 8542.31.00.01 Automotive Yes
PPAP Yes Family Name PIC12
Instruction Set Architecture RISC Device Core PIC
Core Architecture PIC Maximum CPU Frequency (MHz) 32
Maximum Clock Rate (MHz) 32 Data Bus Width (bit) 8
Program Memory Type Flash Program Memory Size 3.5KB
RAM Size 128B Maximum Expanded Memory Size 56KB
Programmability Yes Interface Type I2C/SPI/USART
Number of I/Os 6 No. of Timers 3
PWM 1 Number of ADCs Single
ADC Channels 4 ADC Resolution (bit) 10
Number of DACs Single DAC Resolution (bit) 5
USART 1 UART 0
USB 0 SPI 1
I2C 1 I2S 0
CAN 0 Ethernet 0
Watchdog 1 Analog Comparators 1
Parallel Master Port No Real Time Clock No
Minimum Operating Supply Voltage (V) 1.8 Typical Operating Supply Voltage (V) 5|2.5|3.3
Maximum Operating Supply Voltage (V) 5.5 Maximum Power Dissipation (mW) 800
Minimum Operating Temperature (°C) -40 Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Industrial Packaging Tube
Mounting Surface Mount PCB changed 8
Pin Count 8 Lead Shape Gull-wing

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