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See Technical Specifications

LH28F160S5HNS-L70 +BOM

NOR Flash Memory

Manufacturer:

Sharp Microelectronics
Mfr.Part #:

LH28F160S5HNS-L70
Datasheet:

LH28F160S5HNS-L70 Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH

LH28F160S5HNS-L70 General Description

The Samsung LH28F160S5HNS-L70 NAND flash memory chip is a powerhouse when it comes to storage capacity and reliability. With 16 megabytes of space, this chip is perfect for a variety of industries, from automotive to consumer electronics. Its 3.3-volt power supply ensures efficient operation, while the high-speed synchronous data transfer interface allows for quick read and write speeds. Additionally, the built-in error correction and bad block management features guarantee that your data remains intact and secure

Key Features

Smart 5 technology
– 5 V VCC
– 5 V VPP
High speed write performance
– Two 32-byte page buffers
– 2 µs/byte write transfer rate
Common Flash Interface (CFI)
– Universal & upgradable interface
Scalable Command Set (SCS)
High performance read access time
LH28F160S5-L70
– 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)
LH28F160S5H-L70
– 70 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)
LH28F160S5-L10/S5H-L10
– 100 ns (5.0±0.5 V)
Enhanced automated suspend options
– Write suspend to read
– Block erase suspend to write
– Block erase suspend to read
Enhanced data protection features
– Absolute protection with VPP = GND
– Flexible block locking
– Erase/write lockout during power transitions
SRAM-compatible write interface
User-configurable x8 or x16 operation
High-density symmetrically-blocked architecture
– Thirty-two 64 k-byte erasable blocks
Enhanced cycling capability
– 100 000 block erase cycles
– 3.2 million block erase cycles/chip
Low power management
– Deep power-down mode
– Automatic power saving mode decreases ICC
in static mode
Automated write and erase
– Command user interface
– Status register
ETOXTM∗ V nonvolatile flash technology
Packages
– 56-pin TSOP Type I (TSOP056-P-1420)
Normal bend/Reverse bend
– 56-pin SSOP (SSOP056-P-0600)★
[LH28F160S5-L]
– 64-ball CSP (FBGA064-P-0811)
– 64-pin SDIP (SDIP064-P-0750)★

Specifications

Series	-	Programmabe	Not Verified
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH	Memory Size	16Mbit
Memory Organization	2M x 8, 1M x 16	Memory Interface	Parallel
Write Cycle Time - Word, Page	70ns	Access Time	70 ns
Voltage - Supply	4.75V ~ 5.25V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	LH28F160