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See Technical Specifications

M25P64-VME6TG +BOM

64M-bit capacity

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Tel: +852 95804164

FLASH - NOR Memory IC 64Mbit SPI 50 MHz 8-VDFPN (MLP8) (8x6)

64 Mbit of Flash memory
2.7 V to 3.6 V single supply voltage
SPI bus compatible serial interface
50 MHz clock rate (maximum)
VPP = 9 V for Fast Program/Erase mode (optional)
Page Program (up to 256 Bytes)
– in 1.4 ms (typical)
– in 0.35 ms (typical with VPP = 9 V)
Sector Erase (512 Kbit)
Bulk Erase (64 Mbit)
Electronic Signatures
– JEDEC standard two-Byte signature (2017h)
– RES instruction, one-Byte, signature (16h), for backward compatibility
Hardware Write Protection: protected area size defined by three non-volatile bits (BP0, BP1 and BP2)
More than 100 000 Erase/Program cycles per sector
More than 20-year data retention
Packages
– ECOPACK® (RoHS compliant)

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	8	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Clock Frequency-Max (fCLK)	50 MHz	Data Retention Time-Min	20
Endurance	100000 Write/Erase Cycles	JESD-30 Code	R-PDSO-N8
Length	8 mm	Memory Density	67108864 bit
Memory IC Type	FLASH	Memory Width	8
Number of Functions	1	Number of Terminals	8
Number of Words	8388608 words	Number of Words Code	8000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	8MX8
Parallel/Serial	SERIAL	Peak Reflow Temperature (Cel)	260
Power Supplies	3/3.3 V	Programming Voltage	2.7 V
Qualification Status	Not Qualified	Seated Height-Max	1 mm
Serial Bus Type	SPI	Standby Current-Max	0.0001 A
Supply Current-Max	0.02 mA	Supply Voltage-Max (Vsup)	3.6 V
Supply Voltage-Min (Vsup)	2.7 V	Supply Voltage-Nom (Vsup)	3 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Form	NO LEAD
Terminal Pitch	1.27 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Type	NOR TYPE
Width	6 mm	Write Cycle Time-Max (tWC)	15 ms
Write Protection	HARDWARE/SOFTWARE