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M25PE80-VMN6TP +BOM

High-speed data storage

M25PE80-VMN6TP General Description

With built-in sector protection and hardware/software write protection mechanisms, the M25PE80-VMN6TP prioritizes data security, giving engineers peace of mind when designing systems that handle sensitive information. The device's wide temperature range of -40°C to 85°C further enhances its versatility, enabling operation in various environmental conditions without compromising performance. Whether used in consumer electronics, industrial control systems, or automotive applications, this Micron Flash memory device delivers reliable performance and robust data protection

Key Features

  • SPI bus compatible serial interface
  • 8-Mbit Page-Erasable Flash memory
  • Page size: 256 bytes
  • – Page Write in 11 ms (typical)
  • – Page Program in 0.8 ms (typical)
  • – Page Erase in 10 ms (typical)
  • SubSector Erase (4 Kbytes)
  • Sector Erase (64 Kbytes)
  • Bulk Erase (8 Mbits)
  • 2.7 V to 3.6 V single supply voltage
  • 50 MHz clock rate (maximum)
  • Deep Power-down mode 1 µA (typical)
  • Electronic Signature
  • – JEDEC standard two-byte signature(8014h)
  • Software Write Protection on a 64 Kbyte sector basis
  • Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits
  • More than 100 000 Write cycles
  • More than 20 year data retention
  • Packages
  • – ECOPACK® (RoHS compliant)

Specifications

Description NOR Flash SPI 8Mbit 1 8/8 SOIC 1 IT Datasheet Datasheet
Availability Not Available Mounting Style SMD/SMT
Series M25PE80 Memory Size 8 Mbit
Supply Voltage - Min 2.7 V Supply Voltage - Max 3.6 V
Active Read Current - Max 8 mA Interface Type SPI
Maximum Clock Frequency 75 MHz Organization 1 M x 8
Data Bus Width 8 bit Timing Type Synchronous
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 85 C

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