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M29DW128G70NF6E +BOM

Wide Storage Capacity of 128 Megabits

Key Features

  • M29DW323
  • 32Mb (4Mbx8 / 2Mbx16), Boot Block
  • Access Time
  • 70, 90ns
  • Supply Voltage
  • Vcc = 2.7V to 3.6V for Program, Erase and Read
  • Vpp = 12V for fast Program (optional)
  • Programming Time
  • 10µs per Byte/Word typical
  • Double Word / Quadruple Byte Program
  • Low Power Consumption
  • Standby and Automatic Standby
  • Dual Operations:
  • Read in one bank or group of banks while Program or Erase in the other

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 56 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.51
Access Time-Max 60 ns Alternate Memory Width 8
Boot Block BOTTOM/TOP Command User Interface YES
Common Flash Interface YES Data Polling YES
JESD-30 Code R-PDSO-G56 JESD-609 Code e3
Length 18.4 mm Memory Density 134217728 bit
Memory IC Type FLASH Memory Width 16
Number of Functions 1 Number of Sectors/Size 8,62
Number of Terminals 56 Number of Words 8388608 words
Number of Words Code 8000000 Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 8MX16 Page Size 8 words
Parallel/Serial PARALLEL Programming Voltage 3 V
Qualification Status Not Qualified Ready/Busy YES
Seated Height-Max 1.2 mm Sector Size 32K,128K
Standby Current-Max 0.0001 A Supply Current-Max 0.015 mA
Supply Voltage-Max (Vsup) 3.6 V Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V Surface Mount YES
Technology CMOS Temperature Grade INDUSTRIAL
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Pitch 0.5 mm Terminal Position DUAL
Toggle Bit YES Type NOR TYPE
Width 14 mm

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