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See Technical Specifications

M29W640GL70NB6E +BOM

Legacy NOR Flash

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

M29W640GL70NB6E
Datasheet:

M29W640GL70NB6E Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

56
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for M29W640GL70NB6E

M29W640GL70NB6E General Description

The M29W640GL70NB6E Flash memory device from STMicroelectronics is a versatile and reliable solution for data storage and retrieval. With its 64Mb capacity, multiple sectors and blocks, and flexible voltage range of 2.7V to 3.6V, this device offers seamless integration and efficient performance. Its typical access time of 70ns ensures fast and responsive data access, while the maximum frequency of 108MHz enables high-speed data transfer for demanding applications

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	56	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	70 ns	Additional Feature	TOP BOOT BLOCK
Alternate Memory Width	8	Boot Block	TOP
Command User Interface	YES	Common Flash Interface	YES
Data Polling	YES	JESD-30 Code	R-PDSO-G56
JESD-609 Code	e3	Length	18.4 mm
Memory Density	67108864 bit	Memory IC Type	FLASH
Memory Width	16	Number of Functions	1
Number of Sectors/Size	128	Number of Terminals	56
Number of Words	4194304 words	Number of Words Code	4000000
Operating Mode	ASYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	4MX16
Page Size	4/8 words	Parallel/Serial	PARALLEL
Programming Voltage	3 V	Qualification Status	Not Qualified
Ready/Busy	YES	Seated Height-Max	1.2 mm
Sector Size	64K	Standby Current-Max	0.0001 A
Supply Current-Max	0.02 mA	Supply Voltage-Max (Vsup)	3.6 V
Supply Voltage-Min (Vsup)	2.7 V	Supply Voltage-Nom (Vsup)	3 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Pitch	0.5 mm
Terminal Position	DUAL	Toggle Bit	YES
Type	NOR TYPE	Width	14 mm