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M29W640GT70NA6E +BOM

TSOP-48 NOR Flash product M29W640GT70NA6E is environmentally-friendly

M29W640GT70NA6E General Description

Operating within a voltage range of 2.7V to 3.6V, the M29W640GT70NA6E flash memory chip is versatile and can be used in a variety of electronic devices. Whether it's in smartphones, tablets, digital cameras, or other consumer electronics, this chip provides reliable data storage that users can depend on. Its high-speed performance ensures smooth operation, even when handling large files or running multiple applications simultaneously

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 48 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.51
Access Time-Max 70 ns Additional Feature TOP BOOT BLOCK
Alternate Memory Width 8 Boot Block TOP
Command User Interface YES Common Flash Interface YES
Data Polling YES JESD-30 Code R-PDSO-G48
JESD-609 Code e3 Length 18.4 mm
Memory Density 67108864 bit Memory IC Type FLASH
Memory Width 16 Number of Functions 1
Number of Sectors/Size 8,127 Number of Terminals 48
Number of Words 4194304 words Number of Words Code 4000000
Operating Mode ASYNCHRONOUS Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C Organization 4MX16
Page Size 4/8 words Parallel/Serial PARALLEL
Programming Voltage 3 V Qualification Status Not Qualified
Ready/Busy YES Seated Height-Max 1.2 mm
Sector Size 8K,64K Standby Current-Max 0.0001 A
Supply Current-Max 0.02 mA Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES Technology CMOS
Temperature Grade INDUSTRIAL Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Pitch 0.5 mm
Terminal Position DUAL Toggle Bit YES
Type NOR TYPE Width 12 mm

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