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See Technical Specifications

M29W800DB45N6E +BOM

Size: 12 x 20 mm

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

M29W800DB45N6E
Datasheet:

M29W800DB45N6E Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR

M29W800DB45N6E General Description

Designed for performance and versatility, the M29W800DB45N6E flash memory chip is a top choice for industrial and automotive applications. Its high-speed programming algorithm allows for efficient data writing, while its extended temperature range ensures reliable operation in challenging environments. The chip's compact package and additional features make it easy to integrate into a wide range of systems

Key Features

Supply voltage
– VCC = 2.7 V to 3.6 V for program, erase and read
Access times: 45, 70, 90 ns
Programming time
– 10 μs per byte/word typical
19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 16 main blocks
Program/erase controller
– Embedded byte/word program algorithms
Erase suspend and resume modes
– Read and program another block during erase suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Common flash interface
– 64-bit security code
Low power consumption
– Standby and automatic standby
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W800DT: 22D7h
– Bottom device code M29W800DB: 225Bh

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	8Mbit	Memory Organization	1M x 8, 512K x 16
Memory Interface	Parallel	Write Cycle Time - Word, Page	45ns
Access Time	45 ns	Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	M29W800