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See Technical Specifications

M29W800DB70ZE6E +BOM

The M29W800DB70ZE6E is a versatile NOR Flash memory device that can store data in either 1Mx8 or 512Kx16 configurations

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

M29W800DB70ZE6E
Datasheet:

M29W800DB70ZE6E Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR

M29W800DB70ZE6E General Description

Featuring a 1 megabyte capacity and operating at 3V, the M29W800DB70ZE6E flash memory chip by STMicroelectronics is designed for high-speed data storage and retrieval. Its parallel interface and maximum clock frequency of 70 MHz provide efficient communication and processing capabilities. With floating gate technology, the chip offers high reliability and endurance, making it well-suited for industrial and automotive applications

Key Features

Supply voltage
– VCC = 2.7 V to 3.6 V for program, erase and read
Access times: 45, 70, 90 ns
Programming time
– 10 μs per byte/word typical
19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 16 main blocks
Program/erase controller
– Embedded byte/word program algorithms
Erase suspend and resume modes
– Read and program another block during erase suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Common flash interface
– 64-bit security code
Low power consumption
– Standby and automatic standby
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W800DT: 22D7h
– Bottom device code M29W800DB: 225Bh

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	8Mbit	Memory Organization	1M x 8, 512K x 16
Memory Interface	Parallel	Write Cycle Time - Word, Page	70ns
Access Time	70 ns	Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	M29W800