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MB85RS64TPN-G-AMEWE1 +BOM
The compact and durable design of this product makes it suitable for various industrial and consumer applications
SOP-
Manufacturer:
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Mfr.Part #:
MB85RS64TPN-G-AMEWE1
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Datasheet:
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Memory Type:
Non-Volatile
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Memory Format:
FRAM
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Technology:
FRAM (Ferroelectric RAM)
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Memory Size:
64Kbit
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EDA/CAD Models:
Availability: 5228 PCS
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MB85RS64TPN-G-AMEWE1 General Description
Fujitsu Semiconductor's MB85RS64TPN-G-AMEWE1 is a standout in the realm of non-volatile FRAM ICs. With a robust 64 kilobits storage capacity and an operational voltage range of 3.0 to 3.6 volts, it offers exceptional performance in a tiny package. It stands out with its speedy read and write capabilities, boasting a read access time of 150 nanoseconds and a write access time of 150 microseconds. Its impressive endurance of 10^10 read/write cycles and ability to retain data for up to 10 years without power make it a reliable option for diverse applications
Specifications
Category | Integrated Circuits (ICs)MemoryMemory | Series | - |
Memory Type | Non-Volatile | Memory Format | FRAM |
Technology | FRAM (Ferroelectric RAM) | Memory Size | 64Kbit |
Memory Organization | 8K x 8 | Memory Interface | SPI |
Clock Frequency | 10 MHz | Write Cycle Time - Word, Page | - |
Voltage - Supply | 1.8V ~ 3.6V | Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount | Base Product Number | MB85RS64 |
Pin Count | 9 | Released Date | Mar 31, 2021 |
Last Modified Date | Mar 7, 2023 4:10 PM UTC |
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In Stock: 5,228
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
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