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MR2A16AMYS35R +BOM

Low-power consumption and high-speed interface make it an excellent choice for real-time processing applications

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MR2A16AMYS35R General Description

MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 44-TSOP2

Specifications

Category Integrated Circuits (ICs)MemoryMemory Series Automotive, AEC-Q100
Memory Type Non-Volatile Memory Format RAM
Technology MRAM (Magnetoresistive RAM) Memory Size 4Mbit
Memory Organization 256K x 16 Memory Interface Parallel
Write Cycle Time - Word, Page 35ns Access Time 35 ns
Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 125°C (TA)
Mounting Type Surface Mount Base Product Number MR2A16
Product Category: MRAM Memory Size: 4 Mbit
Organization: 256 k x 16 Data Bus Width: 16 bit
Mounting Style: SMD/SMT Access Time: 35 ns
Supply Voltage - Min: 3 V Supply Voltage - Max: 3.6 V
Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 125 C
Series: MR2A16A Packaging: Reel
Moisture Sensitive: Yes Product Type: MRAM
Factory Pack Quantity: 1500 Subcategory: Memory & Data Storage

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